منابع مشابه
Atomic Structure of Faceted 3 CSL Grain Boundary in Silicon: HRTEM and Ab-initio Calculation
{112} 3 CSL grain boundary in silicon was investigated by high-resolution transmission electron microscopy (HRTEM) and ab-initio calculation. A {112} 3 CSL boundary consisted of two segments which differed in atomic structure. The segment near the connected corner to {111} 3 CSL boundary showed symmetric structure and the other long segment, being distant region from the corner, showed asymmetr...
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Nanocrystalline materials have received great attention due to their potential for improved functionality and have been proposed for extreme environments where the interfaces are expected to promote radiation tolerance. However, the precise role of the interfaces in modifying defect behavior is unclear. Using long-time simulations methods, we determine the mobility of defects and defect cluster...
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The image processing used in the automated analysis of grain boundaries and triple junctions in scanning electron microscopy images is described. The required image processing includes the location of grain boundaries and triple junctions, calculation of the dihedral angles at triple junctions, and selection of electron backscatter probe points (to obtain grain orientation data).
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Grain boundaries and their networks have a profound influence on the functional and structural properties of every class of polycrystalline materials and play a critical role in structural evolution and phase transformations. Recent experimental advances enable a full crystallographic characterization, including the boundary misorientation and inclination parameters, of grain boundaries. Despit...
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Grain rotation is a well-known phenomenon during high (homologous) temperature deformation and recrystallization of polycrystalline materials. In recent years, grain rotation has also been proposed as a plasticity mechanism at low temperatures (for example, room temperature for metals), especially for nanocrystalline grains with diameter d less than ~15 nm. Here, in tensile-loaded Pt thin films...
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ژورنال
عنوان ژورنال: Nihon Kessho Gakkaishi
سال: 2005
ISSN: 0369-4585,1884-5576
DOI: 10.5940/jcrsj.47.3